PART |
Description |
Maker |
S29GL064M90TAIR12 S29GL064M90TAIR40 S29GL064M90TAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology
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SPANSION[SPANSION]
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S29NS256N |
256/128/64 Megabit (16/8/4M x 16-bit), CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory
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SPANSION
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AM29F200 AM29F200BT-120 AM29F200BT-45 AM29F200BT-5 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
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AMD[Advanced Micro Devices]
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AM29F200BB-120DT1 AM29F200BB-120DP1 AM29F200BB-120 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1
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Advanced Micro Devices, Inc.
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AM27C2048 AM27C2048-120DC AM27C2048-120DC5 AM27C20 |
2 Megabit (128 K x 16-Bit) CMOS EPROM 128K X 16 OTPROM, 120 ns, PQCC44 2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位)的CMOS存储 2 Megabit (128 K x 16-Bit) CMOS EPROM 2兆位28亩16位)CMOS存储 TESTER FLAT CABLE 2兆位28亩16位)的CMOS存储 2 Megabit (128 K x 16-Bit) CMOS EPROM 128K X 16 UVPROM, 55 ns, CDIP40 4-Bit Binary Full Adders With Fast Carry 16-SO 0 to 70 2兆位128亩16位)的CMOS存储 TESTER MODULAR CABLE RJ45/12/11 4-Bit Binary Full Adders With Fast Carry 16-SOIC 0 to 70 Evaluation Kit for the MAX3869 2 megabit CMOS EPROM
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SPANSION LLC Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
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AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
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Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
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AM29LV128LH103EI AM29LV128LH103FI AM29LV128LH103PC |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control 128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns 128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 110ns 128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 120ns 128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 90ns
|
Advanced Micro Devices
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S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位).0伏的CMOS只同步读/写,页模式闪 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
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Spansion, Inc. Spansion Inc. SPANSION LLC
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AT93C56AU3-10UU-1.8 AT93C56AD3-10DH-1.8 AT93C56AW- |
Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
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ATMEL Corporation
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AT93C66B-SSHM-T AT93C56B-SSHM-T |
3-wire Serial EEPROM 2K (256 x 8 or 128 x 16) and 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory IC SMT SRAM 128K X 8 70NS 5V SOP-32 SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位).0伏的CMOS只,引导扇区32引脚闪存
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AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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